Author Type

Graduate Student

Date of Award

2010

Document Type

Thesis

Publication Status

Version of Record

Submission Date

October 2026

Abstract

The efforts addressed in this thesis refer to assaying the degradations in modern solar cells used in space-borne and/or nuclear environment applications. This study is motivated to address the following: 1. Modeling degradations in Si pn-junction solar cells (devices-under-test or DUTs) under different ionizing radiation dosages 2. Preemptive and predictive testing to determine the aforesaid degradations that decide eventual reliability of the DUTs; and 3. Using electrical overstressing (EOS) to emulate the fluence of ionizing radiation dosage on the DUT. Relevant analytical methods, computational efforts and experimental studies are described. Forward/reverse characteristics as well as ac impedance performance of a set of DUTs under pre- and post- electrical overstressings are evaluated. Change in observed DUT characteristics are correlated to equivalent ionizing-radiation dosages. The results are compiled and cause-effect considerations are discussed. Conclusions are enumerated and inferences are made with direction for future studies.

Extent

x, 80 p. : ill. (some col.)

Comments

by George A. Thengum Pallil.|Thesis (M.S.C.S.)--Florida Atlantic University, 2010.|Includes bibliography.|Electronic reproduction. Boca Raton, Fla., 2010. Mode of access: World Wide Web.|by George A. Thengum Pallil.

Identifier

FADT2979384

Format

pdf

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