Date of Award
2005
Document Type
Thesis
Publication Status
Version of Record
Submission Date
October 2026
Thesis/Dissertation Advisor [Chair]
Tsai, Chi-Tay
Abstract
Two-dimensional and three-dimensional methodologies are developed to determine the dislocation multiplication in microelectronic and optoelectronic devices/circuits. A two-dimensional finite element code is developed to simulate the dislocation multiplication in microelectronic and optoelectronic devices/circuits. Example two-dimensional analyses are performed and analysis results are presented. The three-dimensional methodology is successfully implemented using ANSYS APDL Language within the ANSYS program. A three dimensional heterojunction bipolar transistor model is generated. CFD-thermal and structural analyses are performed to determine temperature fields and dislocation densities, which are calculated as functions of time, thickness of the thermal shunt, and heat generation rates.
Extent
142 p.
Recommended Citation
Wang, Xueming., "Finite element modeling of dislocation multiplication in microelectronic and optoelectronic devices/circuits" (2005). Electronic Theses and Dissertations 2000 - 2009. 868.
https://digitalcommons.fau.edu/etd_general_5/868
Identifier
FADT12182
Comments
College of Engineering and Computer Science|FAU Electronic Theses and Dissertations Collection|Thesis (Ph.D.)--Florida Atlantic University, 2005.|College of Engineering and Computer Science