Date of Award
2008
Document Type
Thesis
Publication Status
Version of Record
Submission Date
October 2026
Thesis/Dissertation Advisor [Chair]
Bagby, Jonathan S.
Abstract
Ultra-Wide band (UWB) systems are a new wireless technology capable of transmitting data over a wide spectrum of frequency bands with very low power and high data rates. This technology has the potential to replace almost every cable at home or in an office with a wireless connection. In a UWB receiver, a radio frequency (RF) low noise amplifier (LNA) is one of the most important components. This thesis discusses the entire process involving the design ofUWB low noise amplifiers including a detailed stage by stage analysis of a computer aided design (CAD) of a MOSFET UWB LNA. Simulation tools and concepts from Level I equations are used in order to design a circuit with a realistic MOS model such as the BSIM3 used in this work. The LNA shows improved power consumption over the designs it is based on while still producing comparable results.
Extent
138 p.
Recommended Citation
Camacho, Esteban, "Design ofMOSFET ultra-wideband low noise amplifiers" (2008). Electronic Theses and Dissertations 2000 - 2009. 1440.
https://digitalcommons.fau.edu/etd_general_5/1440
Identifier
FA00012510
Comments
College of Engineering and Computer Science|Thesis (M.S.)--Florida Atlantic University, 2008.|FAU Electronic Theses and Dissertations Collection|College of Engineering and Computer Science