Date of Award
1991
Document Type
Thesis
Publication Status
Version of Record
Submission Date
October 2026
Thesis/Dissertation Advisor [Chair]
Tsai, Chi-Tay
Abstract
Thermal stresses are induced by temperature variations in gallium arsenide(GaAs) crystal growth. The thermal stresses cause plastic deformations by dislocation and dynamic interaction in the crystal. In this study, firstly the temperature distribution in the Czochralski technique (CZ) growth of GaAs crystal is obtained according to the Jordan model. Secondly a visco-plastic response function for the GaAs crystal is developed from the Haasen model. Finally a nonlinear finite element model is employed to simulate the dislocation generation during CZ growth of GaAs crystal.
Extent
71 p.
Recommended Citation
Liu, Ping., "prediction of dislocation generation during gallium arsenide crystal growth" (1991). Electronic Theses and Dissertations 1990 - 1999. 216.
https://digitalcommons.fau.edu/etd_general_4/216
Identifier
FADT14780
Comments
College of Engineering and Computer Science|FAU Electronic Theses and Dissertations Collection|Thesis (M.S.)--Florida Atlantic University, 1991.|College of Engineering and Computer Science