Author

Author Type

Graduate Student

Date of Award

1991

Document Type

Thesis

Publication Status

Version of Record

Submission Date

October 2026

Thesis/Dissertation Advisor [Chair]

Liu, Da Wei

Abstract

CW photoluminescence and picosecond excitation correlation spectroscopy techniques were utilized to characterize two dimensional carriers modulation doped in GaAs-Al0.3Ga0.7As multiple quantum wells. Three characteristic transitions have been confirmed. Temperature variation measurements showed a strong carrier-phonon coupling in the samples, which is the main mechanism responsible for the fast carrier relaxation observed. In the time resolved experiments, it was found that the carrier relaxation slowed down as the excitation intensity increased, which we attribute to the buildup of non-equilibrium phonons rather than the dynamic screening effect. A theoretical calculation based upon hot phonon effect is presented.

Extent

101 p.

Comments

Thesis (M.S.)--Florida Atlantic University, 1991.|Thesis (M.S.)--Florida Atlantic University, 1991.

Identifier

FADT14754

Format

pdf

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