Author Type

Graduate Student

Date of Award

1971

Document Type

Thesis

Publication Status

Version of Record

Submission Date

October 2026

Thesis/Dissertation Advisor [Chair]

Blakemore, John S.

Abstract

Analysis of Hall effect and optical measurements shows that nickel, cobalt, and manganese form deep compact acceptors in Gallium Arsenide, with activation energies of 0.20 eV, 0.16 eV, and 0.09 eV respectively. In all three systems the carrier transport is due to free holes in the valence band. The hole mobility appears to be limited by non-polar scattering at high temperatures and by ionized impurity scattering at lower temperatures. At low temperatures impurity band conduction was apparent in crystals with heavy doping. The photo-absorption crosssection for manganese (which we find is lower than previously reported) and cobalt can be viewed as the sum of a Lucovsky-like delta-function potential model for photo-ionization, and smaller but recognizable contributions due to transitions of holes into the valence "split-off" band. We have observed the spectral dependence of photoconductivity in these three doped GaAs systems from the extrinsic threshold through the intrinsic peak.

Extent

116 p.

Comments

Thesis (M.S.)--Florida Atlantic University, 1971.|Charles E. Schmidt College of Science|FAU Electronic Theses and Dissertations Collection|Thesis (M.S.)--Florida Atlantic University, 1971.

Identifier

FADT13430

Format

pdf

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