Author Type

Graduate Student

Date of Award

1971

Document Type

Thesis

Publication Status

Version of Record

Submission Date

October 2026

Abstract

The spectral dependence of extrinsic photoconductivity over the range 130 meV to 700 meV has been measured (mostly at 80°K, with light chopped at 270 Hz) for a variety of indium doped silicon crystals. Samples were characterized by 70°- 400°K Hall and conductivity measurements, and had indium densities ranging from 7 x 10^15 cm^-3 to 6 x 10^17 cm^-3. Crystals of moderately large and very small compensation were used. Data was converted into response per incident photon and per absorbed photon, using photoionization cross-section data measured on the same group of crystals. The response per absorbed photon is approximately constant over the studied spectral range for most crystals, with no visible evidence of an oscillatory component. The data was Fourier analyzed in order to emphasize any latent periodicity in the photo-response. A weak periodic component at 10 meV intervals was found and tentatively associated with localized phonon modes.

Extent

97 p.

Comments

Thesis (M.S.)--Florida Atlantic University, 1971.|Thesis (M.S.)--Florida Atlantic University, 1971.

Identifier

FADT13428

Format

pdf

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