Author Type

Graduate Student

Date of Award

1978

Document Type

Thesis

Publication Status

Version of Record

Submission Date

October 2026

Abstract

Al-Si02-Si capacitors were exposed to 50keV x-ray irradiation at two temperatures, T = 77°K and T = 298°K. No bias was · applied during exposure. Capacitance-Voltage curves were generated using the high frequency and quasistatic techniques. The energy distribution of surface states, calculated by the Castagne technique, was dependent upon exposure temperature. The total number of radiation induced surface states, NTss saturated, and was the same for both exposure temperatures. The radiation induced additional acceptor surface states with energies near the valence band. No difference was observed in the oxide charge density between samples exposed at T = 77°K and T = 298°K. The flat band voltage shift saturated at a dose of approximately 0.55 mrad(Si). A generation-recombination model is used for the oxide and interface charge build up at both temperatures, to calculate the maximum depth of radiation induced charges, d. The experimentally determined values of NTss and d are consistent with the generation-recombination model.

Extent

126 p.

Comments

FAU Electronic Theses and Dissertations Collection|Thesis (M.S.)--Florida Atlantic University, 1978.|Charles E. Schmidt College of Science|FAU Electronic Theses and Dissertations Collection

Identifier

FADT13908

Format

pdf

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