Author Type

Graduate Student

Date of Award

1974

Document Type

Thesis

Publication Status

Version of Record

Submission Date

October 2026

Abstract

It is shown that the photo-ionization spectral properties for an impurity in a semiconductor can be used to derive the functional dependence of the bound state radial wavefunction. This is effected by a Mellin transform, since it is shown that the transformation between real space and reciprocal space properties can be made unambiguously in either direction, within the framework of the electric dipole approximation. For simplicity, we have considered the transformation when the effective mass can be treated as a scalar quantity. Computer techniques were used to carry out the integration involved in this transformation, and known optical data was employed for boron and indium in silicon, for mercury in germanium, and for manganese and copper in GaAs. As expected, the optical properties for Si:B yield a radial wavefunction with a bound charge distribution characteristic of a shallow acceptor, whereas the data for the other four impurities required a quite compact bound charge distribution. It is shown that the form of the effective pseudopotential seen by a bound hole can be deduced from the radial dependence of the deduced wavefunction.

Extent

66 p.

Comments

FAU Electronic Theses and Dissertations Collection|Thesis (M.S.)--Florida Atlantic University, 1974.|Charles E. Schmidt College of Science|FAU Electronic Theses and Dissertations Collection

Identifier

FADT13655

Format

pdf

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