Author Type

Graduate Student

Date of Award

1973

Document Type

Thesis

Publication Status

Version of Record

Submission Date

October 2026

Abstract

An automatic measuring system was designed and used for studying the hulk properties of semiconductors through Hall effect and conductivity measurements. This system employed the van der Pauw technique. Transport property measurements were taken for mercury-doped germanium samples between 20 and 300K, using both van der Pauw and conventional bridge-shaped samples. The two methods were found to be in good agreement. Three mercury-doped germanium crystals were examined, and Hall data showed one to be partially compensated, one essentially uncompensated and one controlled by shallow acceptors below 70K. The rate at which free holes are scattered was consistent with a neutral mercury acceptor scattering cross-section of the order of 10^-12cm^2 crude agreement with Erginsoy's theory for neutral impurity scattering. The infrared photoconductive response of mercury-doped germanium was measured at T = 20K in the 3 to 14 micron wavelength region. From this a photoionization threshold of 0.091 eV was found as expected and a capture cross-section sigma p = 4x10^-10cm^2 inferred for ionized mercury centers at T = 20K.

Extent

66 p.

Comments

Thesis (M.S.)--Florida Atlantic University, 1973.|Thesis (M.S.)--Florida Atlantic University, 1973.

Identifier

FADT13613

Format

pdf

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