Author Type

Graduate Student

Date of Award

1973

Document Type

Thesis

Publication Status

Version of Record

Submission Date

October 2026

Abstract

Measurements of the Hall Effect and conductivity at between 20 and 500K and optical absorption measurements at 77 and 20K have completed the characterization of manganese as a deep acceptor in gallium arsenide. The photo-ionization cross-section maxium (about 8.5x10^-17 cm^2) agreed well with the Lucovsky delta function potential model, while the spectral dependence agreed best with the quantum defect model with a coulomb continuum final state. Impurity concentrations and activation energies were determined from Hall Effect data and the correlation of activation energy with Na and Nd determined. Impurity conduction appearing below 100K was characterized in heavily doped (Na = 2x10^19 cm^-3 ) a moderately compensated (K=0.1) samples. Both metallic type impurity conduction and the thermally activated type were seen. AMott transition was found that occurs within a very narrow range of impurity concentrations.

Extent

107 p.

Comments

Thesis (M.S.)--Florida Atlantic University, 1973.|Thesis (M.S.)--Florida Atlantic University, 1973.

Identifier

FADT13545

Format

pdf

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