Date of Award
1992
Document Type
Thesis
Publication Status
Version of Record
Submission Date
October 2026
Thesis/Dissertation Advisor [Chair]
Liu, Da Wei
Abstract
A photoluminescence (PL) study of Al(x)Ga(1-x)As/GaAs quantum wells (QWs) was undertaken at low temperature by using the HeNe laser. The temperature dependence of heavy hole exciton peak energies indicated that the PL signals are contributed by the recombination of excitons bound to interface defects at low temperature and the recombination of free excitons at high temperature. The temperature dependence of the PL profile of a single QW sample with growth interruption at the interfaces was successfully interpreted by the enlarged monolayer fluctuation. The linewidth of low temperature PL peaks was used to characterize the interfacial quality of QWs. The quality improvement of single QWs by tilting (001) substrate 4 degrees toward (111) Ga direction was observed.
Extent
102 p.
Recommended Citation
Wan, Zhong, "Photoluminescence characterization of aluminum gallium arsenide/gallium arsenide quantum well interfacial quality" (1992). Electronic Theses and Dissertations 1990 - 1999. 346.
https://digitalcommons.fau.edu/etd_general_4/346
Identifier
FADT14835
Comments
Thesis (M.S.)--Florida Atlantic University, 1992.|Thesis (M.S.)--Florida Atlantic University, 1992.